Design, assembly and characterization of silicide-based thermoelectric modules G Skomedal, L Holmgren, H Middleton, IS Eremin, GN Isachenko, ... Energy conversion and management 110, 13-21, 2016 | 80 | 2016 |
Silicides: Materials for thermoelectric energy conversion MI Fedorov, GN Isachenko Japanese Journal of Applied Physics 54 (7S2), 07JA05, 2015 | 72 | 2015 |
High Effective Thermoelectrics Based on the Mg2Si-Mg2Sn Solid Solution MI Fedorov, VK Zaitsev, GN Isachenko Solid State Phenomena 170, 286-292, 2011 | 60 | 2011 |
Transport properties of Mg2 X 0.4Sn0.6 solid solutions (X = Si, Ge) with p-type conductivity MI Fedorov, VK Zaĭtsev, IS Eremin, EA Gurieva, AT Burkov, ... Physics of the Solid State 48, 1486-1490, 2006 | 59 | 2006 |
Thermoelectric Properties of Hot-Pressed Materials Based on Mg2Si n Sn1−n AY Samunin, VK Zaitsev, PP Konstantinov, MI Fedorov, GN Isachenko, ... Journal of electronic materials 42, 1676-1679, 2013 | 37 | 2013 |
Kinetic properties of p-Mg2Si x Sn1 − x solid solutions for x < 0.4 GN Isachenko, VK Zaĭtsev, MI Fedorov, AT Burkov, EA Gurieva, ... Physics of the Solid State 51, 1796-1799, 2009 | 30 | 2009 |
Thermoelectric Properties of Nanostructured p-Mg2Si x Sn1−x (x = 0.2 to 0.4) Solid Solutions GN Isachenko, AY Samunin, EA Gurieva, MI Fedorov, ... Journal of Electronic Materials 45, 1982-1986, 2016 | 23 | 2016 |
The influence of weak tin doping on the thermoelectric properties of zinc antimonide AA Shabaldin, LV Prokof’eva, GJ Snyder, PP Konstantinov, GN Isachenko, ... Journal of Electronic Materials 45, 1871-1874, 2016 | 19 | 2016 |
Thermoelectric Properties of n-Type Si0,8Ge0,2-FeSi2 Multiphase Nanostructures A Usenko, D Moskovskikh, A Korotitskiy, M Gorshenkov, A Voronin, ... Journal of Electronic Materials 45, 3427-3432, 2016 | 14 | 2016 |
Crystallization and properties of CrSi2 single crystals grown from a tin solution-melt FY Solomkin, VK Zaitsev, NF Kartenko, AS Kolosova, AS Orekhov, ... Technical Physics 55, 151-153, 2010 | 11 | 2010 |
Influence of heat treatment on the structure and thermoelectric properties of CrSi2 FY Solomkin, EI Suvorova, VK Zaitsev, SV Novikov, AT Burkov, ... Technical Physics 56, 305-307, 2011 | 10 | 2011 |
On the structure and thermoelectric properties of CoSi obtained from a supersaturated solution–melt in Sn FY Solomkin, AS Orekhov, SV Novikov, NA Arkharova, GN Isachenko, ... Semiconductors 53, 761-764, 2019 | 9 | 2019 |
Efficient thermoelectric materials based on solid solutions of mg2x compounds (x= si, ge, sn) VK Zaitsev, GN Isachenko, AT Burkov Thermoelectrics for power generation-a look at trends in the technology, 2016 | 8 | 2016 |
Homogeneity domain and thermoelectric properties of CrSi2 FY Solomkin, VK Zaitsev, SV Novikov, YA Samunin, GN Isachenko Technical Physics 58, 289-293, 2013 | 8 | 2013 |
Kinetic properties of p-type Mg/sub 2/Si/sub 0.4/Sn/sub 0.6/solid solutions MI Fedorov, VK Zaitsev, IS Eremin, EA Gurieva, AT Burkov, ... Proceedings ICT'03. 22nd International Conference on Thermoelectrics (IEEE …, 2003 | 8 | 2003 |
Thermoelectric properties of n-Type Mg2Si–Mg2Sn solid solutions with different grain sizes AY Samunin, VK Zaitsev, DA Pshenay-Severin, PP Konstantinov, ... Physics of the Solid State 58, 1528-1531, 2016 | 4 | 2016 |
Crystallization of highest manganese silicide MnSi1.71–1.75 from tin-lead solution-melt FY Solomkin, VK Zaitsev, NF Kartenko, AS Kolosova, AY Samunin, ... Technical Physics 53, 1636-1637, 2008 | 4 | 2008 |
Structural features and dopant gradients in Mg2SnXSi1-X ternary compounds E Hatzikraniotis, GS Polymeris, CB Lioutas, A Burkov, EC Stefanaki, ... MRS Online Proceedings Library (OPL) 1642, mrsf13-1642-bb03-09, 2014 | 3 | 2014 |
Structure, microstructure, and thermopower of highest manganese silicide crystals grown from zinc solution-melt FY Solomkin, VK Zaitsev, NF Kartenko, AS Kolosova, AY Samunin, ... Technical Physics 53, 800-801, 2008 | 3 | 2008 |
Effect of Sample-Shape Imperfection on Uncertainty in Measurements of the Thermal-Conductivity by the Laser-Flash Method AV Asach, GN Isachenko, AV Novotelnova, VE Fomin, KL Samusevich, ... Semiconductors 53, 723-726, 2019 | 2 | 2019 |