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Carola de Benito
Carola de Benito
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Title
Cited by
Cited by
Year
A detailed analysis of GOS defects in MOS transistors: testing implications at circuit level
J Segura, C De Benito, A Rubio, CF Hawkins
Proceedings of 1995 IEEE International Test Conference (ITC), 544-551, 1995
671995
On the thermal models for resistive random access memory circuit simulation
JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ...
Nanomaterials 11 (5), 1261, 2021
662021
A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors
J Segura, C De Benito, A Rubio, CF Hawkins
Journal of Electronic Testing 8 (3), 229-239, 1996
501996
Exploring resistive switching‐based memristors in the charge–flux domain: A modeling approach
MM Al Chawa, R Picos, JB Roldan, F Jimenez‐Molinos, MA Villena, ...
International Journal of Circuit Theory and Applications 46 (1), 29-38, 2018
392018
Impact of thermal gradients on clock skew and testing
SA Bota, JL Rossello, C De Benito, A Keshavarzi, J Segura
IEEE Design & Test of Computers 23 (5), 414-424, 2006
372006
A compact gate-level energy and delay model of dynamic CMOS gates
JL Rosselló, C de Benito, J Segura
IEEE Transactions on Circuits and Systems II: Express Briefs 52 (10), 685-689, 2005
282005
A simple piecewise model of reset/set transitions in bipolar ReRAM memristive devices
MM Al Chawa, C de Benito, R Picos
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (10), 3469-3480, 2018
252018
Dynamic critical resistance: A timing-based critical resistance model for statistical delay testing of nanometer ICs
JL Rosselló, C de Benito, SA Bota, J Segura
2007 Design, Automation & Test in Europe Conference & Exhibition, 1-6, 2007
152007
Design and implementation of passive memristor emulators using a charge-flux approach
MM Al Chawa, C de Benito, M Roca, R Picos, SG Stavrinides
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
142018
A procedure to calculate a delay model for memristive switches
C de Benito, MM Al Chawa, R Picos, E Garcia-Moreno
Workshop on Memristor Technology, Design, Automation and Computing, 2017
132017
Waveform and frequency effects on reset transition in bipolar ReRAM in flux-charge space
MM Al Chawa, A Rodriguez-Fernandez, M Bargallo, F Campabadal, ...
International Conference on Memristive Materials, Devices & Systems …, 2017
122017
Emulating memristors in a digital environment using stochastic logic
O Camps, R Picos, C de Benito, MM Al Chawa, SG Stavrinides
2018 7th International Conference on Modern Circuits and Systems …, 2018
92018
Effective accuracy estimation and representation error reduction for stochastic logic operations
O Camps, R Picos, C de Benito, MM Al Chawa, SG Stavrinides
2018 7th International Conference on Modern Circuits and Systems …, 2018
82018
A purely digital memristor emulator based on a flux-charge model
O Camps, MM Al Chawa, C de Benito, M Roca, SG Stavrinides, R Picos, ...
2018 25th IEEE International Conference on Electronics, Circuits and Systems …, 2018
62018
On the chaotic nature of random telegraph noise in unipolar RRAM memristor devices
SG Stavrinides, MP Hanias, MB Gonzalez, F Campabadal, ...
Chaos, Solitons & Fractals 160, 112224, 2022
52022
A switched capacitor memristor emulator using stochastic computing
C de Benito, O Camps, MM Al Chawa, SG Stavrinides, R Picos
Technologies 10 (2), 39, 2022
52022
Using stochastic computing for virtual screening acceleration
CF Frasser, C de Benito, ES Skibinsky-Gitlin, V Canals, J Font-Rosselló, ...
Electronics 10 (23), 2981, 2021
52021
Cantilever nems relay-based sram devices for enhanced reliability
SA Bota, J Verd, J Barceló, X Gili, B Alorda, G Torrens, C De Benito, ...
2017 12th International Conference on Design & Technology of Integrated …, 2017
52017
Implementation of the Hindmarsh–Rose Model Using Stochastic Computing
O Camps, SG Stavrinides, C De Benito, R Picos
Mathematics 10 (23), 4628, 2022
42022
Using self-heating resistors as a case study for memristor compact modeling
R Picos, MM Al Chawa, C De Benito, SG Stavrinides, LO Chua
IEEE Journal of the Electron Devices Society 10, 466-473, 2022
42022
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