| Origin of the tetragonal ground state of Heusler compounds SV Faleev, Y Ferrante, J Jeong, MG Samant, B Jones, SSP Parkin Physical Review Applied 7 (3), 034022, 2017 | 159 | 2017 |
| Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy J Jeong, Y Ferrante, SV Faleev, MG Samant, C Felser, SSP Parkin Nature Communications 7 (1), 10276, 2016 | 96 | 2016 |
| Heusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance SV Faleev, Y Ferrante, J Jeong, MG Samant, B Jones, SSP Parkin Physical Review Materials 1 (2), 024402, 2017 | 82 | 2017 |
| Unified explanation of chemical ordering, the Slater-Pauling rule, and half-metallicity in full Heusler compounds SV Faleev, Y Ferrante, J Jeong, MG Samant, B Jones, SSP Parkin Physical Review B 95 (4), 045140, 2017 | 55 | 2017 |
| Chiral domain wall motion in unit-cell thick perpendicularly magnetized Heusler films prepared by chemical templating PC Filippou, J Jeong, Y Ferrante, SH Yang, T Topuria, MG Samant, ... Nature communications 9 (1), 4653, 2018 | 47 | 2018 |
| Bias dependence of spin transfer torque in Co2MnSi Heusler alloy based magnetic tunnel junctions J Zhang, T Phung, A Pushp, Y Ferrante, J Jeong, C Rettner, BP Hughes, ... Applied Physics Letters 110 (17), 2017 | 25 | 2017 |
| Current‐induced magnetization switching by the high spin Hall conductivity α‐W WB Liao, TY Chen, Y Ferrante, SSP Parkin, CF Pai physica status solidi (RRL)–Rapid Research Letters 13 (11), 1900408, 2019 | 13 | 2019 |
| Tetragonal Mn3Sn Heusler films with large perpendicular magnetic anisotropy deposited on metallic MnN underlayers using amorphous substrates Y Ferrante, J Jeong, R Saha, SV Faleev, MG Samant, T Topuria, H Deniz, ... APL Materials 7 (3), 2019 | 11 | 2019 |
| Heusler-based synthetic antiferrimagnets PC Filippou, SV Faleev, C Garg, J Jeong, Y Ferrante, T Topuria, ... Science Advances 8 (8), eabg2469, 2022 | 7 | 2022 |
| Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torque J Jeong, MG Samant, SSP Parkin, Y Ferrante US Patent 10,651,234, 2020 | 6 | 2020 |
| Templating layers for perpendicularly magnetized Heusler films/compounds J Jeong, PC Filippou, Y Ferrante, C Garg, SSP Parkin, M Samant US Patent 11,751,486, 2023 | 4 | 2023 |
| Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) PC Filippou, C Garg, Y Ferrante, SSP Parkin, J Jeong, MG Samant US Patent 10,957,848, 2021 | 4 | 2021 |
| Tunable templating layers for perpendicularly magnetized Heusler films J Jeong, PC Filippou, Y Ferrante, C Garg, SSP Parkin, M Samant US Patent 11,804,321, 2023 | 3 | 2023 |
| Magnetotransport properties of spin-valve structures with Mg spacer layers C Martinez-Boubeta, Y Ferrante, SSP Parkin Applied Physics Letters 106 (3), 2015 | 3 | 2015 |
| Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMR J Jeong, MG Samant, SSP Parkin, Y Ferrante US Patent 10,937,953, 2021 | 2 | 2021 |
| Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping J Jeong, PC Filippou, Y Ferrante, C Garg, M Samant, D Apalkov US Patent 11,925,124, 2024 | 1 | 2024 |
| Ferrimagnetic Heusler compounds with high spin polarization J Jeong, S Faleev, PC Filippou, Y Ferrante, SSP Parkin, M Samant US Patent 11,756,578, 2023 | 1 | 2023 |
| Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization C Garg, PC Filippou, Y Ferrante, SH Yang, B Hughes, CT Rettner, ... arXiv preprint arXiv:2403.08112, 2024 | | 2024 |
| Tetragonal half metallic half-heusler compounds S Faleev, PC Filippou, Y Ferrante, C Garg, M Samant, J Jeong US Patent App. 17/710,399, 2023 | | 2023 |
| Tetragonal half metallic heusler compounds S Faleev, PC Filippou, Y Ferrante, C Garg, M Samant, J Jeong US Patent App. 17/710,438, 2023 | | 2023 |
Jaewoo JeongIBM Almaden Research CenterVerified email at us.ibm.com
