| High efficiency Si/CdS radial nanowire heterojunction photodetectors using etched Si nanowire templates S Manna, S Das, SP Mondal, R Singha, SK Ray The Journal of Physical Chemistry C 116 (12), 7126-7133, 2012 | 120 | 2012 |
| Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering S Mandal, RK Singha, A Dhar, SK Ray Materials Research Bulletin 43 (2), 244-250, 2008 | 93 | 2008 |
| Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices S Das, K Das, RK Singha, A Dhar, SK Ray Applied Physics Letters 91 (23), 2007 | 57 | 2007 |
| Structural and optical properties of germanium nanostructures on Si (100) and embedded in high-k oxides SK Ray, S Das, RK Singha, S Manna, A Dhar Nanoscale Research Letters 6, 1-10, 2011 | 49 | 2011 |
| Optical and electrical properties of undoped and doped Ge nanocrystals S Das, R Aluguri, S Manna, R Singha, A Dhar, L Pavesi, SK Ray Nanoscale research letters 7, 1-11, 2012 | 47 | 2012 |
| Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy RK Singha, S Manna, S Das, A Dhar, SK Ray Applied Physics Letters 96 (23), 2010 | 45 | 2010 |
| Evolution of strain and composition of Ge islands on Si (001) grown by molecular beam epitaxy during postgrowth annealing RK Singha, S Das, S Majumdar, K Das, A Dhar, SK Ray Journal of Applied Physics 103 (11), 2008 | 28 | 2008 |
| Microstructural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide S Das, RK Singha, S Manna, S Gangopadhyay, A Dhar, SK Ray Journal of Nanoparticle Research 13, 587-595, 2011 | 25 | 2011 |
| Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals S Das, RK Singha, A Dhar, SK Ray, A Anopchenko, N Daldosso, L Pavesi Journal of Applied Physics 110 (2), 2011 | 24 | 2011 |
| Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands S Das, K Das, RK Singha, S Manna, A Dhar, SK Ray, AK Raychaudhuri Nanoscale research letters 6, 1-7, 2011 | 19 | 2011 |
| Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si R Aluguri, S Das, RK Singha, SK Ray Current applied physics 13 (1), 12-17, 2013 | 15 | 2013 |
| Light emission and floating gate memory characteristics of germanium nanocrystals S Das, S Manna, R Singha, A Anopchenko, N Daldosso, L Pavesi, A Dhar, ... Physica status solidi (a) 208 (3), 635-638, 2011 | 15 | 2011 |
| Microstructural characteristics and phonon structures in luminescence from surface oxidized Ge nanocrystals embedded in HfO2 matrix S Das, RK Singha, S Gangopadhyay, A Dhar, SK Ray Journal of Applied Physics 108 (5), 2010 | 15 | 2010 |
| Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots S Das, S Manna, RK Singha, R Aluguri, SK Ray Journal of Applied Physics 113 (6), 2013 | 11 | 2013 |
| Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for floating gate memory devices S Das, RK Singha, K Das, A Dhar, SK Ray Journal of Nanoscience and Nanotechnology 9 (9), 5484-5488, 2009 | 11 | 2009 |
| Surface potential, charging and local current transport of individual Ge quantum dots grown by molecular beam epitaxy RK Singha, S Manna, R Bar, S Das, SK Ray Applied Surface Science 407, 418-426, 2017 | 8 | 2017 |
| Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix R Aluguri, S Das, S Manna, RK Singha, SK Ray Optical Materials 34 (8), 1430-1433, 2012 | 8 | 2012 |
| Optical and electrical properties of undoped and doped Ge nanocrystals Nanoscale Res S Das, R Aluguri, S Manna, R Singha, A Dhar, L Pavesi, S Ray Lett 7, 143-153, 2012 | 8 | 2012 |
| Morphology and growth of capped Ge/Si quantum dots Y Yacoby, N Elfassy, SK Ray, RK Singha, S Das, E Cohen, S Yochelis, ... Journal of nanoparticle research 15, 1-7, 2013 | 7 | 2013 |
| Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates S Manna, R Aluguri, S Das, R Singha, SK Ray Optics Express 21 (23), 28219-28231, 2013 | 6 | 2013 |
