| Ultralow ON-resistance high-voltage p-channel LDMOS with an accumulation-effect extended gate X Luo, Q Tan, J Wei, K Zhou, G Deng, Z Li, B Zhang IEEE Transactions on Electron Devices 63 (6), 2614-2619, 2016 | 43 | 2016 |
| Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron, sp of 0.74/0.28 GW/cm2 C Wang, H Zhou, J Zhang, W Mu, J Wei, Z Jia, X Zheng, X Luo, X Tao, ... Applied Physics Letters 120 (11), 2022 | 38 | 2022 |
| Ultralow ON-Resistance SOI LDMOS With Three Separated Gates and High- Dielectric X Luo, M Lv, C Yin, J Wei, K Zhou, Z Zhao, T Sun, B Zhang, Z Li IEEE Transactions on Electron Devices 63 (9), 3804-3807, 2016 | 38 | 2016 |
| Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination Y Wei, X Luo, Y Wang, J Lu, Z Jiang, J Wei, Y Lv, Z Feng IEEE Transactions on Power Electronics 36 (10), 10976-10980, 2021 | 35 | 2021 |
| Ultra-low on-resistance LDMOS with multi-plane electron accumulation layers W Ge, X Luo, J Wu, M Lv, J Wei, D Ma, G Deng, W Cui, YH Yang, KF Zhu IEEE Electron Device Letters 38 (7), 910-913, 2017 | 29 | 2017 |
| Simulation study of a novel snapback-free and low turn-off loss reverse-conducting IGBT with controllable trench gate J Wei, X Luo, L Huang, B Zhang IEEE Electron Device Letters 39 (2), 252-255, 2017 | 28 | 2017 |
| High-voltage thin-SOI LDMOS with ultralow ON-resistance and even temperature characteristic J Wei, X Luo, Y Zhang, P Li, K Zhou, B Zhang, Z Li IEEE Transactions on Electron Devices 63 (4), 1637-1643, 2016 | 27 | 2016 |
| High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer C Yang, X Luo, T Sun, A Zhang, D Ouyang, S Deng, J Wei, B Zhang Nanoscale research letters 14, 1-6, 2019 | 26 | 2019 |
| A snapback-free and low-loss shorted-anode SOI LIGBT with self-adaptive resistance X Luo, Y Yang, T Sun, J Wei, D Fan, D Ouyang, G Deng, Y Yang, B Zhang, ... IEEE Transactions on Electron Devices 66 (3), 1390-1395, 2019 | 25 | 2019 |
| Novel reduced ON-resistance LDMOS with an enhanced breakdown voltage X Luo, J Wei, X Shi, K Zhou, R Tian, B Zhang, Z Li IEEE Transactions on Electron Devices 61 (12), 4304-4308, 2014 | 25 | 2014 |
| A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration XR Luo, GL Yao, ZY Zhang, YH Jiang, K Zhou, P Wang, YG Wang, TF Lei, ... Chinese Physics B 21 (6), 068501, 2012 | 23 | 2012 |
| A snapback-free fast-switching SOI LIGBT with polysilicon regulative resistance and trench cathode L Huang, X Luo, J Wei, K Zhou, G Deng, T Sun, D Ouyang, D Fan, ... IEEE Transactions on Electron Devices 64 (9), 3961-3966, 2017 | 20 | 2017 |
| Novel low-resistance current path UMOS with high-K dielectric pillars XR Luo, JY Cai, Y Fan, YH Fan, XW Wang, J Wei, YH Jang, K Zhou, C Yin, ... IEEE transactions on electron devices 60 (9), 2840-2846, 2013 | 20 | 2013 |
| Experimental study of 600 V accumulation-type lateral double-diffused MOSFET with ultra-low on-resistance G Deng, X Luo, Z Zhao, J Wei, S Cheng, C Li, Z Ma, B Zhang, S Zhang IEEE Electron Device Letters 41 (3), 465-468, 2020 | 19 | 2020 |
| A split triple-gate power LDMOS with improved static-state and switching performance Y Wei, XR Luo, W Ge, Z Zhao, Z Ma, J Wei IEEE Transactions on Electron Devices 66 (6), 2669-2674, 2019 | 19 | 2019 |
| AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure C Yang, X Luo, A Zhang, S Deng, D Ouyang, F Peng, J Wei, B Zhang, Z Li IEEE Transactions on Electron Devices 65 (11), 5203-5207, 2018 | 19 | 2018 |
| A carrier stored SOI LIGBT with ultralow ON-state voltage and high current capability T Sun, X Luo, J Wei, G Deng, L Huang, Z Zhao, Y Yang, B Zhang, Z Li, ... IEEE Transactions on Electron Devices 65 (8), 3365-3370, 2018 | 18 | 2018 |
| A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge X Luo, T Liao, J Wei, J Fang, F Yang, B Zhang Journal of Semiconductors 40 (5), 052803, 2019 | 17 | 2019 |
| Accumulation mode triple gate SOI LDMOS with ultralow on-resistance and enhanced transconductance J Wei, X Luo, D Ma, J Wu, Z Li, B Zhang 2016 28th International symposium on power semiconductor devices and ICs …, 2016 | 17 | 2016 |
| 4H-SiC superjunction trench MOSFET with reduced saturation current Q He, X Luo, T Liao, J Wei, G Deng, T Sun, J Fang, F Yang Superlattices and Microstructures 125, 58-65, 2019 | 15 | 2019 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of ChinaVerified email at uestc.edu.cn
