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Ehsan Elahi
Ehsan Elahi
PhD Scholar (Physics), Sejong University
Verified email at sju.ac.kr - Homepage
Title
Cited by
Cited by
Year
Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review
MW Iqbal, E Elahi, A Amin, G Hussain, S Aftab
Superlattices and Microstructures 137, 106350, 2020
472020
A review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic
E Elahi, G Dastgeer, G Nazir, S Nisar, M Bashir, HA Qureshi, D Kim, J Aziz, ...
Computational Materials Science 213, 111670, 2022
422022
Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping
MW Iqbal, A Amin, MA Kamran, H Ateeq, E Elahi, G Hussain, S Azam, ...
Superlattices and Microstructures 135, 106247, 2019
412019
Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe 2/Gr heterojunction
E Elahi, MF Khan, S Rehman, HMW Khalil, MA Rehman, D Kim, H Kim, ...
Dalton Transactions 49 (29), 10017-10027, 2020
402020
A review on two-dimensional (2D) perovskite material-based solar cells to enhance the power conversion efficiency
E Elahi, G Dastgeer, AS Siddiqui, SA Patil, MW Iqbal, PR Sharma
Dalton Transactions 51 (3), 797-816, 2022
242022
A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping
MW Iqbal, E Elahi, A Amin, S Aftab, I Aslam, G Hussain, MA Shehzad
Superlattices and Microstructures 147, 106698, 2020
242020
Lateral PIN (p-MoTe2/Intrinsic-MoTe2/n-MoTe2) Homojunction Photodiodes
S Aftab, HMS Ajmal, E Elahi, HM Mansoor Ul Haque, Samiya, MW Iqbal, ...
ACS Applied Nano Materials 5 (5), 6455-6462, 2022
192022
The supercapattery designed with a binary composite of niobium silver sulfide (NbAg 2 S) and activated carbon for enhanced electrochemical performance
H Rafique, MW Iqbal, SM Wabaidur, H ul Hassan, AM Afzal, T Abbas, ...
RSC advances 13 (19), 12634-12645, 2023
172023
Bipolar photoresponse of a graphene field-effect transistor induced by photochemical reactions
MF Khan, E Elahi, NU Hassan, MA Rehman, HMW Khalil, MA Khan, ...
ACS Applied Electronic Materials 5 (9), 5111-5119, 2023
142023
ReSe2/metal interface for hydrogen gas sensing
S Aftab, M Samiya, MS Hussain, E Elahi, S Yousuf, HMS Ajmal, MW Iqbal, ...
Journal of Colloid and Interface Science 603, 511-517, 2021
142021
A brief review on the spin valve magnetic tunnel junction composed of 2D materials
E Elahi, G Dastgeer, PR Sharma, S Nisar, M Suleman, MW Iqbal, M Imran, ...
Journal of Physics D: Applied Physics 55 (42), 423001, 2022
132022
Robust approach towards wearable power efficient transistors with low subthreshold swing
E Elahi, M Suleman, S Nisar, PR Sharma, MW Iqbal, SA Patil, H Kim, ...
Materials Today Physics 30, 100943, 2023
122023
The MOF-originated NiCu-POx/NGQD for efficient supercapattery devices and hydrogen evolution reaction
H ul Hassan, MW Iqbal, SM Wabaidur, AM Afzal, MA Habila, E Elahi
International Journal of Hydrogen Energy 48 (81), 31531-31549, 2023
102023
Gate-assisted MoSe2 transistor to detect the streptavidin via supporter molecule engineering
S Nisar, G Dastgeer, M Shahzadi, ZM Shahzad, E Elahi, A Irfan, J Eom, ...
Materials Today Nano 24, 100405, 2023
72023
Samiya, MW Iqbal, J. Aziz, S. Yousuf, MZ Iqbal and MA Shehzad, ACS Appl
S Aftab, HMS Ajmal, E Elahi, HMMU Haque
Nano Mater 5, 6455-6462, 2022
62022
Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr
MW Iqbal, S Razzaq, NA Noor, S Aftab, A Afzal, H Ullah, M Suleman, ...
Journal of Materials Science: Materials in Electronics 33 (15), 12416-12425, 2022
52022
Improved memory performance of ALD grown HfO2 films by nitrogen doping
J Aziz, MF Khan, D Neumaier, M Ahmad, H Kim, S Rehman, E Elahi, ...
Materials Science and Engineering: B 297, 116755, 2023
42023
Recent advances in thermomagnetic devices for spin-caloritronic phenomena
E Elahi, AA Al-Kahtani, G Dastgeer, S Aftab, J Aziz, MW Iqbal, M Manzoor, ...
Applied Materials Today 32, 101846, 2023
42023
Improvement in electronic attributes of tungsten diselenide (WSe2)-based field-effect transistor via gas doping (DUV + N2)
MW Iqbal, E Elahi, S Gouadria, HH Hegazy, AM Afzal, S Aftab, M Irshad, ...
Journal of Materials Science: Materials in Electronics 34 (7), 677, 2023
42023
Temperature, Bias, Angle, and Thickness‐Dependent Magnetoresistance in a Vertical Spin Valve Structure CoFe/TiO2/CoFe
E Elahi, G Dastgeer, PR Sharma, VD Chavan, H Noh
physica status solidi (RRL)–Rapid Research Letters 17 (2), 2200212, 2023
42023
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