Aluguri Rakesh
Cited by
Cited by
Optical and electrical properties of undoped and doped Ge nanocrystals
S Das, R Aluguri, S Manna, R Singha, A Dhar, L Pavesi, SK Ray
Nanoscale research letters 7 (1), 143, 2012
Dielectric and transport properties of carbon nanotube-CdS nanostructures embedded in polyvinyl alcohol matrix
SP Mondal, R Aluguri, SK Ray
Journal of Applied Physics 105 (11), 114317, 2009
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
D Kumar, R Aluguri, U Chand, TY Tseng
Applied Physics Letters 110 (20), 203102, 2017
Metal oxide resistive switching memory: materials, properties and switching mechanisms
D Kumar, R Aluguri, U Chand, TY Tseng
Ceramics International 43, S547-S556, 2017
Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices
R Bar, R Aluguri, S Manna, A Ghosh, PV Satyam, SK Ray
Applied Physics Letters 107 (9), 093102, 2015
Optical photoresponse of CuS–n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etching
AK Katiyar, AK Sinha, S Manna, R Aluguri, SK Ray
Physical Chemistry Chemical Physics 15 (48), 20887-20893, 2013
Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si
R Aluguri, S Das, RK Singha, SK Ray
Current Applied Physics 13 (1), 12-17, 2013
Temperature dependent photoluminescence and electroluminescence characteristics of core-shell Ge–GeO2 nanowires
S Manna, A Katiyar, R Aluguri, SK Ray
Journal of Physics D: Applied Physics 48 (21), 215103, 2015
Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions
S Manna, R Aluguri, R Bar, S Das, N Prtljaga, L Pavesi, SK Ray
Nanotechnology 26 (4), 045202, 2015
One bipolar transistor selector-One resistive random access memory device for cross bar memory array
R Aluguri, D Kumar, FM Simanjuntak, TY Tseng
AIP Advances 7 (9), 095118, 2017
Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots
S Das, S Manna, RK Singha, R Aluguri, SK Ray
Journal of Applied Physics 113 (6), 063101, 2013
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random …
S Chandrasekaran, FM Simanjuntak, R Aluguri, TY Tseng
Thin Solid Films 660, 777-781, 2018
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
D Kumar, R Aluguri, U Chand, TY Tseng
Nanotechnology 29 (12), 125202, 2018
MBE-grown Si and Si1− xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device
S Manna, R Aluguri, A Katiyar, S Das, A Laha, HJ Osten, SK Ray
Nanotechnology 24 (50), 505709, 2013
Direct band gap optical emission from compressively strained Ge films grown on relaxed Si0.5Ge0.5 substrate
R Aluguri, S Manna, SK Ray
Applied Physics Letters 103 (16), 161118, 2013
Direct band gap optical emission from Ge islands grown on relaxed Si0.5Ge0.5/Si (100) substrate
R Aluguri, S Manna, SK Ray
Journal of Applied Physics 115 (1), 013502, 2014
Emission characteristics of self-assembled strained Ge1− xSnx islands for sources in the optical communication region
R Bar, AK Katiyar, R Aluguri, SK Ray
Nanotechnology 28 (29), 295201, 2017
Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si 0.5 Ge 0.5 virtual substrates
S Manna, R Aluguri, S Das, R Singha, SK Ray
Optics express 21 (23), 28219-28231, 2013
Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix
R Aluguri, S Das, S Manna, RK Singha, SK Ray
Optical Materials 34 (8), 1430-1433, 2012
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
D Kumar, R Aluguri, U Chand, TY Tseng
IEEE Transactions on Electron Devices 66 (3), 1296-1301, 2019
The system can't perform the operation now. Try again later.
Articles 1–20