| Carrier mobility model for GaN TT Mnatsakanov, ME Levinshtein, LI Pomortseva, SN Yurkov, GS Simin, ... Solid-State Electronics 47 (1), 111-115, 2003 | 333 | 2003 |
| Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devices TT Mnatsakanov, IL Rostovtsev, NI Philatov Solid-state electronics 30 (6), 579-585, 1987 | 154 | 1987 |
| " Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes ME Levinshtein, TT Mnatsakanov, P Ivanov, JW Palmour, SL Rumyantsev, ... IEEE Transactions on Electron Devices 48 (8), 1703-1710, 2001 | 104 | 2001 |
| Carrier mobility model for simulation of SiC-based electronic devices TT Mnatsakanov, ME Levinshtein, LI Pomortseva, SN Yurkov Semiconductor science and technology 17 (9), 974, 2002 | 86 | 2002 |
| Transport coefficients and Einstein relation in a high density plasma of solids TT Mnatsakanov physica status solidi (b) 143 (1), 225-234, 1987 | 66 | 1987 |
| Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level TT Mnatsakanov, LI Pomortseva, SN Yurkov Semiconductors 35 (4), 394-397, 2001 | 65 | 2001 |
| Steady-state and transient characteristics of 10 kV 4H-SiC diodes ME Levinshtein, TT Mnatsakanov, PA Ivanov, R Singh, JW Palmour, ... Solid-State Electronics 48 (5), 807-811, 2004 | 44 | 2004 |
| Universal analytical approximation of the carrier mobility in semiconductors for a wide range of temperatures and doping densities TT Mnatsakanov, ME Levinshtein, LI Pomortseva, SN Yurkov Semiconductors 38, 56-60, 2004 | 44 | 2004 |
| High voltage SiC diodes with small recovery time ME Levinshtein, TT Mnatsakanov, PA Ivanov, JW Palmour, ... Electronics Letters 36 (14), 1241-1242, 2000 | 38 | 2000 |
| Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices ME Levinshtein, TT Mnatsakanov, AK Agarwal, JW Palmour Semiconductor science and technology 26 (5), 055024, 2011 | 36 | 2011 |
| Parameters of electron–hole scattering in silicon carbide TT Mnatsakanov, ME Levinshtein, PA Ivanov, JW Palmour, AG Tandoev, ... Journal of applied physics 93 (2), 1095-1098, 2003 | 36 | 2003 |
| Parameters of electron–hole scattering in silicon carbide TT Mnatsakanov, ME Levinshtein, PA Ivanov, JW Palmour, AG Tandoev, ... Journal of applied physics 93 (2), 1095-1098, 2003 | 36 | 2003 |
| Power bipolar devices based on silicon carbide PA Ivanov, ME Levinshtein, TT Mnatsakanov, JW Palmour, AK Agarwal Semiconductors 39, 861-877, 2005 | 32 | 2005 |
| Carrier lifetime measurements in 10 kV 4H-SiC diodes ME Levinshtein, TT Mnatsakanov, PA Ivanov, R Singh, KG Irvine, ... Electronics Letters 39 (8), 689-691, 2003 | 32 | 2003 |
| Temperature dependence of turn-on processes in 4H–SiC thyristors ME Levinshtein, TT Mnatsakanov, PA Ivanov, AK Agarwal, JW Palmour, ... Solid-State Electronics 45 (3), 453-459, 2001 | 31 | 2001 |
| Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling TT Mnatsakanov Solid-state electronics 42 (1), 153-163, 1998 | 31 | 1998 |
| On the transport equations in popular commercial device simulators ME Levinshtein, TT Mnatsakanov IEEE Transactions on Electron Devices 49 (4), 702-703, 2002 | 29 | 2002 |
| Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse ME Levinshtein, PA Ivanov, TT Mnatsakanov, JW Palmour, MK Das, ... Solid-state electronics 52 (11), 1802-1805, 2008 | 24 | 2008 |
| The critical charge concept for 4H-SiC-based thyristors TT Mnatsakanov, SN Yurkov, ME Levinshtein, AG Tandoev, AK Agarwal, ... Solid-State Electronics 47 (9), 1581-1587, 2003 | 24 | 2003 |
| The critical charge density in high voltage 4H-SiC thyristors ME Levinshtein, PA Ivanov, TT Mnatsakanov, SN Yurkov, AK Agarwal, ... Solid-State Electronics 47 (4), 699-704, 2003 | 23 | 2003 |
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicVerified email at rpi.edu
