Aryan Afzalian
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Nanowire transistors without junctions
JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ...
Nature nanotechnology 5 (3), 225-229, 2010
Junctionless multigate field-effect transistor
CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge
Applied Physics Letters 94 (5), 053511, 2009
Performance estimation of junctionless multigate transistors
CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge
Solid-State Electronics 54 (2), 97-103, 2010
High-temperature performance of silicon junctionless MOSFETs
CW Lee, A Borne, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, ...
IEEE transactions on electron devices 57 (3), 620-625, 2010
SOI gated resistor: CMOS without junctions
JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ...
2009 IEEE International SOI Conference, 1-2, 2009
Physical modeling and design of thin-film SOI lateral PIN photodiodes
A Afzalian, D Flandre
IEEE Transactions on Electron Devices 52 (6), 1116-1122, 2005
Vertical gate-all-around nanowire GaSb-InAs core-shell n-type tunnel FETs
T Vasen, P Ramvall, A Afzalian, G Doornbos, M Holland, C Thelander, ...
Scientific reports 9 (1), 202, 2019
Signal-to-noise ratio optimization for detecting bacteria with interdigitated microelectrodes
N Couniot, D Flandre, LA Francis, A Afzalian
Sensors and Actuators B: Chemical 189, 43-51, 2013
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
R Yan, D Lynch, T Cayron, D Lederer, A Afzalian, CW Lee, N Dehdashti, ...
Solid-State Electronics 52 (12), 1872-1876, 2008
A new F (ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs
A Afzalian, ND Akhavan, CW Lee, R Yan, I Ferain, P Razavi, JP Colinge
Journal of Computational Electronics 8, 287-306, 2009
Capacitive biosensing of bacterial cells: Analytical model and numerical simulations
N Couniot, A Afzalian, N Van Overstraeten-Schl÷gel, LA Francis, ...
Sensors and Actuators B: Chemical 211, 428-438, 2015
Ultra-scaled Z-RAM cell
S Okhonin, M Nagoga, CW Lee, JP Colinge, A Afzalian, R Yan, ...
2008 IEEE International SOI Conference, 157-158, 2008
Ge CMOS gate stack and contact development for vertically stacked lateral nanowire FETs
MJH Van Dal, G Vellianitis, G Doornbos, B Duriez, MC Holland, T Vasen, ...
2018 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2018
Ge n-channel FinFET with optimized gate stack and contacts
MJH Van Dal, B Duriez, G Vellianitis, G Doornbos, R Oxland, M Holland, ...
2014 IEEE International Electron Devices Meeting, 9.5. 1-9.5. 4, 2014
Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes
A Afzalian, D Flandre
Solid-state electronics 51 (2), 337-342, 2007
Computationally efficient self-consistent born approximation treatments of phonon scattering for coupled-mode space non-equilibrium Green’s function
A Afzalian
Journal of Applied Physics 110 (9), 094517, 2011
Physics of gate modulated resonant tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current
A Afzalian, JP Colinge, D Flandre
Solid-state electronics 59 (1), 50-61, 2011
Properties of accumulation-mode multi-gate field-effect transistors
JP Colinge, D Lederer, A Afzalian, R Yan, CW Lee, ND Akhavan, W Xiong
Japanese journal of applied physics 48 (3R), 034502, 2009
Control of interlayer physics in 2H transition metal dichalcogenides
KC Wang, TK Stanev, D Valencia, J Charles, A Henning, VK Sangwan, ...
Journal of Applied Physics 122 (22), 224302, 2017
Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors
A Afzalian
npj 2D Materials and Applications 5 (1), 5, 2021
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