Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020 | 588 | 2020 |
Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ... IEEE Electron Device Letters 38 (10), 1379-1382, 2017 | 92 | 2017 |
Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ... IEEE electron device letters 34 (3), 378-380, 2013 | 79 | 2013 |
Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2 G Karbasian, R dos Reis, AK Yadav, AJ Tan, C Hu, S Salahuddin applied physics letters 111 (2), 022907, 2017 | 67 | 2017 |
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ... Applied Physics Express 6 (1), 016503, 2012 | 52 | 2012 |
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ... IEEE Electron Device Letters 40 (9), 1423-1426, 2019 | 33 | 2019 |
Metal-insulator-metal single electron transistors with tunnel barriers prepared by atomic layer deposition G Karbasian, MS McConnell, H George, LC Schneider, MJ Filmer, ... Applied Sciences 7 (3), 246, 2017 | 23 | 2017 |
Ferroelectricity in HfO2 thin films as a function of Zr doping G Karbasian, A Tan, A Yadav, EMH Sorensen, CR Serrao, AI Khan, ... 2017 International Symposium on VLSI Technology, Systems and Application …, 2017 | 17 | 2017 |
Partial switching of ferroelectrics for synaptic weight storage EW Kinder, C Alessandri, P Pandey, G Karbasian, S Salahuddin, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 16 | 2017 |
High aspect ratio features in poly (methylglutarimide) using electron beam lithography and solvent developers G Karbasian, PJ Fay, HG Xing, D Jena, AO Orlov, GL Snider Journal of Vacuum Science & Technology B 30 (6), 2012 | 13 | 2012 |
Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition G Karbasian, AO Orlov, AS Mukasyan, GL Snider 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 11 | 2016 |
Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction MS McConnell, LC Schneider, G Karbasian, S Rouvimov, AO Orlov, ... Journal of Vacuum Science & Technology A 34 (1), 2016 | 11 | 2016 |
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density A Khakifirooz, E Anaya, S Balasubrahmanyam, G Bennett, D Castro, ... IEEE Solid-State Circuits Letters, 2023 | 10 | 2023 |
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier G Karbasian, AO Orlov, GL Snider Journal of Vacuum Science & Technology B 33 (6), 2015 | 10 | 2015 |
Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions G Karbasian, MS McConnell, AO Orlov, S Rouvimov, GL Snider Journal of Vacuum Science & Technology A 34 (1), 2016 | 7 | 2016 |
Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal–insulator–metal tunnel junctions G Karbasian, MS McConnell, AO Orlov, AN Nazarov, GL Snider Nanotechnology 28 (21), 215203, 2017 | 5 | 2017 |
Chemical mechanical planarization of gold G Karbasian, PJ Fay, H Grace Xing, AO Orlov, GL Snider Journal of Vacuum Science & Technology A 32 (2), 2014 | 5 | 2014 |
Nanodamascene metal-insulator-metal single electron transistor prepared by atomic layer deposition of tunnel barrier and subsequent reduction of metal surface oxide G Karbasian, AO Orlov, GL Snider 2015 Silicon Nanoelectronics Workshop (SNW), 1-2, 2015 | 3 | 2015 |
Tunability Of Dopant Concentration In Thin Hafnium Oxide Films G Karbasian, KT Wong US Patent App. 16/434,507, 2019 | 2 | 2019 |
Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers G Karbasian University of Notre Dame, 2015 | 2 | 2015 |