Mingjin Dai (戴明金)
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A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction
M Dai, H Chen, R Feng, W Feng, Y Hu, H Yang, G Liu, X Chen, J Zhang, ...
ACS nano 12 (8), 8739-8747, 2018
Two-dimensional van der Waals materials with aligned in-plane polarization and large piezoelectric effect for self-powered piezoelectric sensors
M Dai, Z Wang, F Wang, Y Qiu, J Zhang, CY Xu, T Zhai, W Cao, Y Fu, ...
Nano letters 19 (8), 5410-5416, 2019
Ultrafast and sensitive self-powered photodetector featuring self-limited depletion region and fully depleted channel with van der Waals contacts
M Dai, H Chen, F Wang, M Long, H Shang, Y Hu, W Li, C Ge, J Zhang, ...
ACS nano 14 (7), 9098-9106, 2020
Robust piezo-phototronic effect in multilayer γ-InSe for high-performance self-powered flexible photodetectors
M Dai, H Chen, F Wang, Y Hu, S Wei, J Zhang, Z Wang, T Zhai, PA Hu
ACS nano 13 (6), 7291-7299, 2019
A mixed-dimensional 1D Se–2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors
H Shang, H Chen, M Dai, Y Hu, F Gao, H Yang, B Xu, S Zhang, B Tan, ...
Nanoscale Horizons 5 (3), 564-572, 2020
Enhanced Piezoelectric Effect Derived from Grain Boundary in MoS2 Monolayers
M Dai, W Zheng, X Zhang, S Wang, J Lin, K Li, Y Hu, E Sun, J Zhang, ...
Nano letters 20 (1), 201-207, 2019
Kirigami-Inspired Highly Stretchable Nanoscale Devices Using Multidimensional Deformation of Monolayer MoS2
W Zheng, W Huang, F Gao, H Yang, M Dai, G Liu, B Yang, J Zhang, ...
Chemistry of Materials 30 (17), 6063-6070, 2018
Efficiently Synergistic Hydrogen Evolution Realized by Trace Amount of Pt-Decorated Defect-Rich SnS2 Nanosheets
G Liu, Y Qiu, Z Wang, J Zhang, X Chen, M Dai, D Jia, Y Zhou, Z Li, PA Hu
ACS applied materials & interfaces 9 (43), 37750-37759, 2017
Ultralow Power Optical Synapses Based on MoS2 Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes
Y Hu, M Dai, W Feng, X Zhang, F Gao, S Zhang, B Tan, J Zhang, Y Shuai, ...
Advanced Materials 33 (52), 2104960, 2021
Non-planar vertical photodetectors based on free standing two-dimensional SnS 2 nanosheets
G Liu, Z Li, X Chen, W Zheng, W Feng, M Dai, D Jia, Y Zhou, PA Hu
Nanoscale 9 (26), 9167-9174, 2017
On-chip mid-infrared photothermoelectric detectors for full-Stokes detection
M Dai, C Wang, B Qiang, F Wang, M Ye, S Han, Y Luo, QJ Wang
Nature Communications 13 (1), 4560, 2022
Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets
W Feng, F Gao, Y Hu, M Dai, H Liu, L Wang, PA Hu
ACS applied materials & interfaces 10 (33), 27584-27588, 2018
Hollow spherical nanoshell arrays of 2D layered semiconductor for high‐performance photodetector device
X Chen, H Yang, G Liu, F Gao, M Dai, Y Hu, H Chen, W Cao, PA Hu, ...
Advanced Functional Materials 28 (8), 1705153, 2018
High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets
W Feng, F Gao, Y Hu, M Dai, H Li, L Wang, PA Hu
Nanotechnology 29 (44), 445205, 2018
High-Performance, Polarization-Sensitive, Long-Wave Infrared Photodetection via Photothermoelectric Effect with Asymmetric van der Waals Contacts
M Dai, C Wang, M Ye, S Zhu, S Han, F Sun, W Chen, Y Jin, Y Chua, ...
ACS nano 16 (1), 295-305, 2022
Multilayer InSe–Te van der waals heterostructures with an ultrahigh rectification ratio and ultrasensitive photoresponse
F Qin, F Gao, M Dai, Y Hu, M Yu, L Wang, W Feng, B Li, PA Hu
ACS applied materials & interfaces 12 (33), 37313-37319, 2020
Intrinsic dipole coupling in 2D van der Waals ferroelectrics for gate‐controlled switchable rectifier
M Dai, K Li, F Wang, Y Hu, J Zhang, T Zhai, B Yang, Y Fu, W Cao, D Jia, ...
Advanced Electronic Materials 6 (2), 1900975, 2020
Shape evolution of two dimensional hexagonal boron nitride single domains on Cu/Ni alloy and its applications in ultraviolet detection
H Yang, L Wang, F Gao, M Dai, Y Hu, H Chen, J Zhang, Y Qiu, Y Zhou, ...
Nanotechnology 30 (24), 245706, 2019
Synchronous Enhancement for Responsivity and Response Speed in In2Se3 Photodetector Modulated by Piezoresistive Effect
W Li, M Dai, Y Hu, H Chen, X Zhu, Q Yang, PA Hu
ACS applied materials & interfaces 11 (50), 47098-47105, 2019
Temperature-dependent growth of few layer β-InSe and α-In2Se3 single crystals for optoelectronic device
Y Hu, W Feng, M Dai, H Yang, X Chen, G Liu, S Zhang, PA Hu
Semiconductor Science and Technology 33 (12), 125002, 2018
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