Michael Shur

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Remis GaskaUVTON, Inc.Verified email at uvton.com
Grigory SiminUniversity of South CarolinaVerified email at engr.sc.edu
Max ShatalovCVD Equipment CorporationVerified email at cvdequipment.com
Taiichi OtsujiRIEC, Tohoku UniversityVerified email at riec.tohoku.ac.jp
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDVerified email at unipress.waw.pl
Maxim RyzhiiS. Associate Professor, University of AizuVerified email at u-aizu.ac.jp
Nezih PalaElectrical & Computer Engineering, Florida International UniversityVerified email at fiu.edu
Vladimir MitinSUNY Distinguished Professor, University at BuffaloVerified email at buffalo.edu
Kwyro LeeProfessor of Electrical Engineering, KAISTVerified email at kaist.ac.kr
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLAVerified email at seas.ucla.edu
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Verified email at soire.renet.ru
Dmitry VekslerHRL LaboratoryVerified email at hrl.com
Qhalid FareedTexas InstrumentsVerified email at ti.com
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRSVerified email at umontpellier.fr
Guanxiong LiuUniversity of California RiversideVerified email at ee.ucr.edu
Juras MickeviciusVilnius UniversityVerified email at ff.vu.lt
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles CoulombVerified email at umontpellier.fr
Mikhail GaevskiCVD Equipment CorporationVerified email at CVDEquipment.com
Hadis MorkoçVirginia Commonwealth UniversityVerified email at vcu.edu
Irina KhmyrovaUniversity of AizuVerified email at u-aizu.ac.jp

Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

Verified email at rpi.edu - Homepage

semiconductors


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Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2176	2001
Handbook series on semiconductor parameters M Levinshtein World Scientific, 1997	2038*	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1496	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990	1337	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 1996	1294	1996
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	1036	2013
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	996	2002
Threshold switching in chalcogenide‐glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Journal of Applied Physics 51 (6), 3289-3309, 1980	832	1980
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	687	2000
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	685	1999
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	642	2005
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	601	1991
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	595	1984
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	543	2006
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	537	2012
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	532	1994
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	516	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	504	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	480	2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	473	1997

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