| Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 208 | 2015 |
| Electrically Tunable Bandgaps in Bilayer MoS2 T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen Nano letters 15 (12), 8000-8007, 2015 | 181 | 2015 |
| Efficient and realistic device modeling from atomic detail to the nanoscale JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ... Journal of Computational Electronics 12 (4), 592-600, 2013 | 120 | 2013 |
| Few-layer phosphorene: An ideal 2D material for tunnel transistors TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman Scientific reports 6 (1), 28515, 2016 | 110 | 2016 |
| Understanding contact gating in Schottky barrier transistors from 2D channels A Prakash, H Ilatikhameneh, P Wu, J Appenzeller Scientific reports 7 (1), 12596, 2017 | 97 | 2017 |
| Dielectric engineered tunnel field-effect transistor H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman IEEE Electron Device Letters 36 (10), 1097-1100, 2015 | 96 | 2015 |
| Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 95 | 2015 |
| Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass H Ilatikhameneh, T Ameen, N Bozidar, Y Tan, G Klimeck, R Rahman Scientific Reports 6 (doi:10.1038/srep31501), 31501, 2016 | 86 | 2016 |
| Complementary black phosphorus tunneling field-effect transistors P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ... ACS nano 13 (1), 377-385, 2018 | 79 | 2018 |
| Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ... ACS nano 11 (3), 2785-2793, 2017 | 73 | 2017 |
| Optimum high-k oxide for the best performance of ultra-scaled double-gate MOSFETs M Salmani-Jelodar, H Ilatikhameneh, S Kim, K Ng, P Sarangapani, ... IEEE Transactions on Nanotechnology 15 (6), 904-910, 2016 | 72 | 2016 |
| Thickness engineered tunnel field-effect transistors based on phosphorene FW Chen, H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman IEEE Electron Device Letters 38 (1), 130-133, 2016 | 66 | 2016 |
| Scaling theory of electrically doped 2D transistors H Ilatikhameneh, G Klimeck, J Appenzeller, R Rahman IEEE Electron Device Letters 36 (7), 726-728, 2015 | 51 | 2015 |
| Can homojunction tunnel FETs scale below 10 nm? H Ilatikhameneh, G Klimeck, R Rahman IEEE Electron Device Letters 37 (1), 115-118, 2015 | 48* | 2015 |
| Configurable electrostatically doped high performance bilayer graphene tunnel FET FW Chen, H Ilatikhameneh, G Klimeck, Z Chen, R Rahman IEEE Journal of the Electron Devices Society 4 (3), 124-128, 2016 | 47 | 2016 |
| Design guidelines for sub-12 nm nanowire MOSFETs M Salmani-Jelodar, SR Mehrotra, H Ilatikhameneh, G Klimeck IEEE Transactions on Nanotechnology 14 (2), 210-213, 2015 | 45 | 2015 |
| From Fowler–Nordheim to nonequilibrium Green’s function modeling of tunneling H Ilatikhameneh, RB Salazar, G Klimeck, R Rahman, J Appenzeller IEEE Transactions on Electron Devices 63 (7), 2871-2878, 2016 | 43 | 2016 |
| Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications H Ilatikhameneh, T Ameen, F Chen, H Sahasrabudhe, G Klimeck, ... IEEE Transactions on Nanotechnology 17 (2), 293-298, 2018 | 39 | 2018 |
| A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations RB Salazar, H Ilatikhameneh, R Rahman, G Klimeck, J Appenzeller Journal of Applied Physics 118 (16), 164305, 2015 | 36* | 2015 |
| Switching Mechanism and the Scalability of vertical-TFETs F Chen, H Ilatikhameneh, Y Tan, G Klimeck, R Rahman IEEE Transactions on Electron Devices 65 (7), 3065-3068, 2018 | 33 | 2018 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
