| Quantum states of neutrons in the Earth's gravitational field VV Nesvizhevsky, HG Börner, AK Petukhov, H Abele, S Baeßler, FJ Rueß, ... Nature 415 (6869), 297-299, 2002 | 817 | 2002 |
| Atomically precise placement of single dopants in Si SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ... Physical review letters 91 (13), 136104, 2003 | 490 | 2003 |
| Measurement of quantum states of neutrons in the Earth’s gravitational field VV Nesvizhevsky, HG Börner, AM Gagarski, AK Petoukhov, GA Petrov, ... Physical Review D 67 (10), 102002, 2003 | 317 | 2003 |
| Toward atomic-scale device fabrication in silicon using scanning probe microscopy FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ... Nano Letters 4 (10), 1969-1973, 2004 | 215 | 2004 |
| Realization of atomically controlled dopant devices in silicon FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ... Small 3 (4), 563-567, 2007 | 141 | 2007 |
| Progress in silicon-based quantum computing RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ... Philosophical Transactions of the Royal Society of London. Series A …, 2003 | 90 | 2003 |
| Scanning probe microscopy for silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ... Molecular Simulation 31 (6-7), 505-515, 2005 | 61 | 2005 |
| One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy FJ Ruess, B Weber, KEJ Goh, O Klochan, AR Hamilton, MY Simmons Physical Review B 76 (8), 085403, 2007 | 51 | 2007 |
| Electronic properties of atomically abrupt tunnel junctions in silicon FJ Ruess, W Pok, KEJ Goh, AR Hamilton, MY Simmons Physical Review B 75 (12), 121303, 2007 | 49 | 2007 |
| Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy FJ Rueß, KEJ Goh, MJ Butcher, TCG Reusch, L Oberbeck, B Weber, ... Nanotechnology 18 (4), 044023, 2006 | 38 | 2006 |
| The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures FJ Rueß, L Oberbeck, KEJ Goh, MJ Butcher, E Gauja, AR Hamilton, ... Nanotechnology 16 (10), 2446, 2005 | 38 | 2005 |
| Competition between surface barriers and bulk pinning in a Nd 2 − x Ce x CuO 4 − y single crystal down to T / T c = 0.02 MBM M. C. de Andrade, N. R. Dilley, F. Ruess PHYSICAL REVIEW B 57 (2), R708, 1998 | 38* | 1998 |
| Atomic-scale silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, W Pok, T Hallam, MJ Butcher, ... International journal of nanotechnology 5 (2-3), 352-369, 2008 | 35 | 2008 |
| Th. Stöferle, A. Westphal, AM Gagarski, GA Petrov, and AV Strelkov VV Nesvizhevsky, HG Börner, AK Petukhov, H Abele, S Baeßler, FJ Rueß Nature 415, 297, 2002 | 35 | 2002 |
| Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy–patterned devices M Fuechsle, FJ Rueß, TCG Reusch, M Mitic, MY Simmons Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 29 | 2007 |
| The next decade in quantum computing and how to play P Gerbert, F Rueß Boston Consulting Group, 5, 2018 | 27 | 2018 |
| Th. Stöferle, A. Westphal, AV Strelkov, KV Protasov, and A. Yu. Voronin VV Nesvizhevsky, HG Börner, AM Gagarski, AK Petukhov, GA Petrov, ... Phys. Rev. D 67, 102002, 2003 | 23 | 2003 |
| Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy T Hallam, FJ Rueß, NJ Curson, KEJ Goh, L Oberbeck, MY Simmons, ... Applied Physics Letters 86 (14), 2005 | 21 | 2005 |
| Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts T Hallam, MJ Butcher, KEJ Goh, FJ Ruess, MY Simmons Journal of Applied Physics 102 (3), 2007 | 19 | 2007 |
| Confinement and integration of magnetic impurities in silicon FJ Rueß, M El Kazzi, L Czornomaz, P Mensch, M Hopstaken, A Fuhrer Applied Physics Letters 102 (8), 2013 | 16 | 2013 |
K. E. J. GohIMREVerified email at imre.a-star.edu.sg
