Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide VK Sangwan*, HS Lee*, H Bergeron, I Balla, ME Beck, KS Chen, ... Nature 554 (7693), 500, 2018 | 672 | 2018 |
A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0. 7Ca0. 3MnO3 HS Lee, SG Choi, HH Park, MJ Rozenberg Scientific reports 3 (1), 1-5, 2013 | 90 | 2013 |
Dual‐Gated MoS2 Memtransistor Crossbar Array HS Lee, VK Sangwan, WAG Rojas, H Bergeron, HY Jeong, J Yuan, K Su, ... Advanced Functional Materials 30 (45), 2003683, 2020 | 74 | 2020 |
Improved Performance of Organic Light Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition YJ Choi, SC Gong, CS Park, HS Lee, JG Jang, HJ Chang, GY Yeom, ... ACS applied materials & interfaces, 2013 | 64 | 2013 |
Solution-processed layered gallium telluride thin-film photodetectors J Kang, VK Sangwan, HS Lee, X Liu, MC Hersam ACS Photonics 5 (10), 3996-4002, 2018 | 49 | 2018 |
Mott-transition-based RRAM Y Wang, KM Kang, M Kim, HS Lee, R Waser, D Wouters, R Dittmann, ... Materials today 28, 63-80, 2019 | 45 | 2019 |
Band structure analysis of La0. 7Sr0. 3MnO3 perovskite manganite using a synchrotron HS Lee, HH Park Advances in Condensed Matter Physics 2015, 2015 | 32 | 2015 |
Manganite-based memristive heterojunction with tunable non-linear I–V characteristics HS Lee, HH Park, MJ Rozenberg Nanoscale 7 (15), 6444-6450, 2015 | 32 | 2015 |
Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO3 thin films HS Lee, CS Park, HH Park Applied Physics Letters 104 (19), 191604, 2014 | 28 | 2014 |
Reconfigurable MoS2 Memtransistors for Continuous Learning in Spiking Neural Networks J Yuan, SE Liu, A Shylendra, WA Gaviria Rojas, S Guo, H Bergeron, S Li, ... Nano letters 21 (15), 6432-6440, 2021 | 23 | 2021 |
Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures YJ Choi, KM Kang, HS Lee, HH Park Journal of Materials Chemistry C 3 (32), 8336-8343, 2015 | 23 | 2015 |
Sodium‐Doped Titania Self‐Rectifying Memristors for Crossbar Array Neuromorphic Architectures SE Kim, JG Lee, L Ling, SE Liu, HK Lim, VK Sangwan, MC Hersam, ... Advanced Materials 34 (6), 2106913, 2022 | 21 | 2022 |
Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition WS Kim, JK Yang, CK Lee, HS Lee, HH Park Thin Solid Films 517 (2), 506-509, 2008 | 18 | 2008 |
Ferroelectric tunnel junction for dense cross-point arrays HS Lee, W Han, HY Chung, M Rozenberg, K Kim, Z Lee, GY Yeom, ... ACS applied materials & interfaces 7 (40), 22348-22354, 2015 | 15 | 2015 |
Visualizing Thermally Activated Memristive Switching in Percolating Networks of Solution‐Processed 2D Semiconductors VK Sangwan, SV Rangnekar, J Kang, J Shen, HS Lee, D Lam, J Shen, ... Advanced Functional Materials 31 (52), 2107385, 2021 | 14 | 2021 |
Piezoelectric transducers on curved dispersive bending wave and poke-charged touch screens H Hoshyarmanesh, N Nehzat, M Salehi, M Ghodsi, HS Lee, HH Park Materials and Manufacturing Processes 29 (7), 870-876, 2014 | 14 | 2014 |
The effect of Sr concentration on resistive switching properties of La1− xSrxMnO3 films SG Choi, HS Lee, H Choi, SW Chung, HH Park Thin Solid Films 529, 352-355, 2013 | 13 | 2013 |
Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state SG Choi, HS Lee, H Choi, SW Chung, HH Park Journal of Physics D: Applied Physics 44 (42), 422001, 2011 | 13 | 2011 |
The role of oxygen defects engineering via passivation of the Al2O3 interfacial layer for the direct growth of a graphene-silicon Schottky junction solar cell M Kim, MA Rehman, KM Kang, Y Wang, S Park, HS Lee, SB Roy, ... Applied Materials Today 26, 101267, 2022 | 12 | 2022 |
Electromagnetic interference shielding behaviors of Zn-based conducting oxide films prepared by atomic layer deposition YJ Choi, KM Kang, HS Lee, HH Park Thin Solid Films 583, 226-232, 2015 | 12 | 2015 |